ME200WLR provides a fully automated SiC wafer-level burn-in testing solution.

The system supports 6-inch and 8-inch SiC MOSFET wafers and enables HTGB (High Temperature Gate Bias) and HTRB (High Temperature Reverse Bias) testing. It accurately measures key parameters including VGS(th), IGSS, and IDSS, allowing early failure screening at the wafer level.

The system features independent control for each drawer, enabling parallel burn-in of multiple wafers under different test conditions. Test results are automatically binned. Real-time system status monitoring is supported during burn-in, and the process is automatically halted in case of abnormalities.

• Fully Automated Solution

1. Supports both OHT and manual cassette loading/unloading modes, with fully automatic wafer alignment and fixture handling. Cycle time (per wafer) ≤ 6 minutes.

2. Proprietary temperature compensation algorithm achieves repeatable positioning accuracy of ≤ ±10 μm.

    

• Probe Card Design

1. Screw-free structure significantly reduces the risk of particulate contamination to wafers and the surrounding environment.

2. Pogo-pin contact depth uniformity ≤ 30%.

• Flexible Operation and Easy Maintenance

1. Modular cabinet design with optional “GB/RB-compatible” and “GB-only” configurations; probe cards are shared between the two cabinet types.

2. Supports wafer product changeover and probe card maintenance without system shutdown. Key components can be replaced within minutes.